Plasma-Enhanced Chemical Vapour Deposition (PECVD) Systems
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Plasma-enhanced chemical vapour deposition (PECVD), as the name suggests, is a chemical vapour deposition (CVD) process which involves a plasma. In CVD, a solid film is created on a heated substrate when process gases flowing over it react at the heated surface. In PECVD, however, the plasma produces energetic electrons, ions, and free radicals which assist the chemical reactions. One of the important features of PECVD is that the substrate temperature need not be as high as for CVD, which is advantageous for temperature-sensitive substrates and films, and is technically easier.

Plasmionique manufactures a number of different types of PECVD reactors, distinguishing themselves by the type of plasma source and the additional features built in for versatility.

  • The parallel-plate reactor is the simplest: the substrate is part of the (grounded) bottom plate and a capacitively-coupled plasma (CCP) is produced by applying RF power to the top plate.
  • Reactors with an RF inductively-coupled plasma (ICP) source benefit from higher plasma density and independent control of density and energy.
  • Microwave PECVD reactors are suited for deposition and synthesis of advanced materials such as diamond-like carbon (DLC) and carbon nanotubes (CNT).
Reactor Type Plasma Source Frequency (MHz) Configuration View brochure
parallel plate PECVD RF CCP 13.56 biased top plate, grounded substrate inquire
ICP PECVD RF ICP FLARION Series 13.56 volume plasma, RF-biasable substrate FLARION Series Plasma Reactors and Sources (PDF)
remote ICP PECVD RF ICP PLUME Series 13.56 remote plasma, RF-biasable substrate PLUME Series ICP Plasma and Ion Sources (PDF)
MW-PECVD Microwave MIRENIQUE Series 2450 various (single-mode, multi-mode, S-ECR, remote) MIRENIQUE Series Microwave Plasma Reactors (PDF)

FEATURES COMMON TO ALL PLASMIONIQUE PECVD REACTOR TYPES


Substrate Mount Feature      Options
Heating
  • resistive element, up to 800 °C
  • quartz lamps
Cooling
  • for temperature-sensitive samples
  • cooling lines integrated into substrate mount
  • water or chilled fluid, closed or open cycle
Biasing
  • control energy profile of impinging ions
  • RF or DC
Manipulation
  • adjustable source-to-substrate distance for optimum film quality
  • manual or computer-controlled
  • load-lock sample loading available

Process environment:

  • Turbomolecular pumping or cryopumping
  • Bypass line with mechanical pump only for high pressure operation
  • Throttling gate valve for automatic pressure control
  • Capacitance manometer for measuring process pressure
  • Gas management system for multiple gases with mass flow controllers, fully automatic and programmable to tailor the gas mix

Process control system:

  • LabVIEW® based control system for monitoring and controlling all system variables
  • Intuitive graphic user interface
  • Alarms and interlocks to protect system hardware and warn of unsafe conditions
  • Real-time plotting and data logging
  • Multi-step programming for process recipes