Plasma Immersion Ion Implantation Systems
plasma ion implantation

Ion implantation is an important method for modifying the characteristics of a surface (for example, doping semiconductors or tool hardening). There are a number of ways of implanting ions in a material, but one of the most common involves immersing the sample in a plasma while raising the sample to a high (negative) potential. Since the plasma will completely surround the sample, this method has the ability to implant ions conformally, in contrast to beam methods.

Plasmionique has developed plasma immersion ion implantation systems utilizing our inductively-coupled plasma (ICP) sources. These produce a high-density plasma filling the chamber, and when a high (negative) potential is applied to the sample, the plasma ions are driven into the surface of the material. The plasma dynamics dictate that the process be pulsed, and so we have developed a high-voltage (10 kV) square wave pulsing circuit for biasing the substrate mount.

Plasmionique ion implantation systems may be equipped with either a FLARION Series ICP source for RF (13.56 MHz) or with a microwave (ECR, 2.45 GHz) plasma source, according to the user’s requirement.

Features of Plasmionique plasma ion implantation systems are presented below:

Plasma Source:

  • Plasmionique FLARION Series ICP source (BROCHURE, PDF)
  • Antenna: “pancake” coil in air, water-cooled
  • RF power at 13.56 MHz
  • Operation pressure 5 mTorr to > 5 Torr
  • Gas injection ring for high density volume plasma
  • Faraday shield with adjustable potential to modify capacitive coupling effects
  • Microwave (ECR) source at 2.45 GHz also available—please inquire.

Substrate mount:

  • Substrate biasing for implantation: up to -10kV, pulsed or continuous
  • Substrate cooling available for sensitive samples
  • Manual axial translation
  • Option for including grid for modifying electric field near sample

Process environment:

  • Turbomolecular pumping system (cryopumping also available)
  • Bypass pumping available with mechanical pump only for high pressure operation
  • Gas management system for multiple gases with mass flow controllers, fully automatic and programmable to tailor the gas mix
  • Capacitance manometer for measuring process pressure
  • Automatic pressure control: downstream using throttling gate valve or upstream using the MFCs

Process control system:

  • LabVIEW® based control system for monitoring and controlling all system variables
  • Intuitive graphic user interface
  • Alarms and interlocks to protect system hardware and warn of unsafe conditions
  • Real-time plotting and data logging
  • Program mode for multi-step process recipes