Etching & Cleaning Reactors
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Plasma reactors designed for etching and cleaning are similar to PECVD reactors, in construction, although some operation parameters, such as substrate temperature,  process gases used, are different.

Plasma reactors used for etching could be configured as Plasma Etching (PE),  Reactive Ion Etching (RIE) and Deep Reactive Ion Etching (DRIE).  

Options for Ion Beam Etching (IBE) is also available. 

Plasmionique systems for etching and cleaning are summarized below:

Application Reactor Type Configuration View brochure
PE parallel-plate
(RF CCP)
  • symmetric
  • biased top electrode
  • grounded substrate
  • substrate cooling option
  • showerhead gas injection
inquire
RIE parallel-plate
(RF CCP)
  • asymmetric
  • biased (smaller) substrate electrode
  • grounded (larger) upper electrode
  • substrate cooling option
inquire
RIE/DRIE* RF ICP
FLARION Series
  • biased substrate
  • high-density plasma
  • decoupling of ion density and energy
  • substrate heating/cooling option
FLARION Series Plasma Reactors and Sources (PDF)
IBE RF ICP
PLUME Series
  • ion beam source (remote ICP with extraction grids)
  • tiltable substrate
  • substrate cooling option
PLUME Series ICP Plasma and Ion Sources (PDF)
Plasma Cleaning
  • parallel plate
  • RF ICP FLARION and PLUME
  • PE/RIE/IBE configurations as appropriate for material
  • gases appropriate for the contaminant
see links above

*DRIE: Deep Reactive Ion Etching